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Challenges in TCAD simulations of tunneling field effect transistors

Herausforderungen in TCAD-Simulationen von Tunneleffekt-Feldeffekttransistoren
 
: Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen

:
presentation urn:nbn:de:0011-n-1923698 (1021 KByte PDF)
MD5 Fingerprint: 7c2857b1bdba9ea529118147b95a175e
© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 12.1.2012


Institute of Electrical and Electronics Engineers -IEEE-:
41st European Solid-State Device Research Conference, ESSDERC 2011. Proceedings : Helsinki, September 12 - 16, 2011
Piscataway, NJ: IEEE Service Center, 2011
ISBN: 978-1-4577-0707-0 (Print)
ISBN: 978-1-4577-0706-3 (Online)
ISBN: 978-1-4577-0708-7
pp.139-142
European Solid-State Device Research Conference (ESSDERC) <41, 2011, Helsinki>
English
Conference Paper, Electronic Publication
Fraunhofer IISB ()
field effect; MOS transistor; TCAD simulation; silicon

Abstract
An extensive comparison of tunneling device simulations versus experimental results is presented. Different tunneling models were used to simulate long channel silicon on insulator tunneling field effect transistors. The results were compared to experimental results, which were taken from the literature. A calibrated parameter set of the dynamic NonLocal-Tunneling model is presented, which qualitatively reproduces the experimental results at different electrostatic potential conditions and physical gate lengths.

: http://publica.fraunhofer.de/documents/N-192369.html