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High-gain quantum-dot semiconductor optical amplifier for 1300 nm

: Bakonyi, Z.; Hui, S.; Onishchukov, G.; Lester, L.F.; Gray, A.L.; Newell, T.C.; Tünnermann, A.


IEEE Journal of Quantum Electronics 39 (2003), No.11, pp.1409-1414
ISSN: 0018-9197
Journal Article
Fraunhofer IOF ()
semiconductor lasers; semiconductor optical amplifiers; quantum-dot optical amplifier; semiconductor lasers

Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a -well" (DWELL) gain region having an aggregate dot density of approximately 8 x1 0 (hoch)11 CM(hoch)-2, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump current. The optical bandwidth is 50 ma, and the output saturation power is 9 dBm. The dependence of the amplifier parame ters on the pump current and the gain recovery dynamics has also been studied.