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Narrow linewidth 2 µm GaSb-based semiconductor disk laser

 
: Rattunde, M.; Kaspar, S.; Rösener, B.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.

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Institute of Electrical and Electronics Engineers -IEEE-; Optical Society of America -OSA-, Washington/D.C.:
European Conference on Lasers and Electro-Optics and 12th European Quantum Electronics Conference, CLEO Europe/EQEC 2011. Vol.1 : 22 - 26 May 2011, Munich, Germany
New York, NY: IEEE, 2011
ISBN: 978-1-4577-0533-5
ISBN: 978-1-4577-0532-8
pp.135
European Quantum Electronics Conference (EQEC) <12, 2011, Munich>
European Conference on Lasers and Electro-Optics (CLEO Europe) <2011, Munich>
English
Abstract
Fraunhofer IAF ()

Abstract
In recent years, optically pumped semiconductor disk lasers (OPSDLs) have attracted increasing interest due to their capability of delivering simultaneously high output power and excellent beam quality [1]. Recently, the realization of high-performance OPSDLs based on the (AlGaIn)(AsSb) material system with emission wavelengths ranging from 1.8 to 2.8 m has been reported [2 - 3]. These long-wavelength semiconductor disk lasers are capable of emitting multiple Watt CW-output power (e.g. up to 5 W at 2.0 m [2]) with a multimode emission spectra, making this laser source suitable for direct applications such as material processing and medical therapy. Other applications in this wavelength regime such as spectroscopy, long-range gas sensing (LIDAR) and free-space optical data transmission via phase modulation require narrow linewidth laser sources (sub-MHz regime) with moderately high output power (0.1-1 W range).

: http://publica.fraunhofer.de/documents/N-190925.html