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A 4x64 pixel CMOS image sensor for 3D measurement applications

: Schrey, O.; Elkhalili, O.; Mengel, P.; Petermann, M.; Brockherde, W.; Hosticka, B.J.

ESSDERC / ESSCIRC 2003. CD-ROM : 16-18 September 2003
Piscataway, NJ: IEEE, 2003
ISBN: 0-7803-8100-9
ISBN: 0-7803-7996-9
European Solid State Circuits Conference (ESSCIRC) <29, 2003, Estoril>
Conference Paper
Fraunhofer IMS ()
image sensor; MDSI; pixel array; Bildsensor; CMOS-Sensor; 3D-Darstellung; Bildverarbeitung

A 4x64 pixel array CMOS image sensor which can capture three-dimensional images has been integrated in a 0.5 mm n-well standard CMOS process. It is based on time-of-flight method and employs an active laser pulse illumination at 900nm optical wavelength. System bandwidth is limited by the refreshing time of the active laser source. The sensor employs the so-called "multiple double short time integration" (MDSI) method which enables compensation of background irradiance and correction of reflectivity variations in the object scene. The chip operates at 3.3V power supply voltage and a clock frequency of 5MHz, which yields a frame rate of 19.5kHz. It has a fast synchronous shutter operating down to 30nsec. The pixel pitch is 130µm x 300µm and the total chip area is 58.3mm².