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Trade-offs between performance and reliability in AlGaN/GaN transistors

: Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O.


Physica status solidi. C 9 (2012), No.2, pp.365-368
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Symposium on Compound Semiconductors (ISCS) <38, 2011, Berlin>
Journal Article, Conference Paper
Fraunhofer IAF ()
GaN; HEMT; reliability; performance

We report on the trade-off between performance and reliability for AlGaN/GaN transistors. It is shown that changes in epitaxial growth, transistor design and process may lead to an improvement in performance but are, at the same time, accompanied by a degradation of device reliability. As a result we show strategies in order to balance performance and reliability as both are linked. Based on these findings we have realized state-of-the-art power bars for mobile communication systems and X-band MMICs for radar applications.