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2011
Conference Paper
Titel
2µm semiconductor disk laser technology
Abstract
Highly efficient GaSb-based semiconductor disk lasers in the 1.9-2.8 µm range have been realized. They reach output powers up to 10 W in CW-operation concomitant with a circular-symmetric low-divergence output beam with a high beam quality (M2 in the range of 1 to 5). By using wavelength intracavity elements, tunable, single-frequency emission was achieved with a heterodyne linewidth below 100 kHz (< 1.3 fm) at 1 W CW-output power.
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