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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001)
| Institute of Electrical and Electronics Engineers -IEEE-:
Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 : 22-26 May 2011, Berlin
New York, NY: IEEE, 2011
ISBN: 978-1-4577-1753-6
4 pp. |
| Compound Semiconductor Week (CSW) <2011, Berlin>
International Conference on Indium Phosphide and Related Materials (IPRM) <23, 2011, Berlin> |
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| English |
| Conference Paper |
| Fraunhofer HHI () |
Abstract
Atomic ordering and decomposition of InxGa1-xAsyP1-y grown lattice matched on InP(001) is investigated with cross-sectional scanning tunnelling microscopy. The atomic composition of the quaternary material is analyzed at both the (110) and (110) cleavage surfaces, yielding two different decomposition effects on different length scales: a formation of columnar structures with widths amounting to some tens of nm and a CuPt-like ordering on the atomic scale.