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Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001)

 
: Lenz, A.; Eisele, H.; Genz, F.; Franke, D.; Kunzel, H.; Pohl, U.W.; Dähne, M.

Institute of Electrical and Electronics Engineers -IEEE-:
Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 : 22-26 May 2011, Berlin
New York, NY: IEEE, 2011
ISBN: 978-1-4577-1753-6
4 pp.
Compound Semiconductor Week (CSW) <2011, Berlin>
International Conference on Indium Phosphide and Related Materials (IPRM) <23, 2011, Berlin>
English
Conference Paper
Fraunhofer HHI ()

Abstract
Atomic ordering and decomposition of InxGa1-xAsyP1-y grown lattice matched on InP(001) is investigated with cross-sectional scanning tunnelling microscopy. The atomic composition of the quaternary material is analyzed at both the (110) and (110) cleavage surfaces, yielding two different decomposition effects on different length scales: a formation of columnar structures with widths amounting to some tens of nm and a CuPt-like ordering on the atomic scale.

: http://publica.fraunhofer.de/documents/N-190161.html