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Effect of MOVPE growth conditions on the formation of self-organized InAs/InGaAsP/InP quantum dots

: Wenning, F.; Künzel, H.; Pohl, U.W.

Institute of Electrical and Electronics Engineers -IEEE-:
Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 : 22-26 May 2011, Berlin
New York, NY: IEEE, 2011
ISBN: 978-1-4577-1753-6
Art.76, 4 pp.
Compound Semiconductor Week (CSW) <2011, Berlin>
International Conference on Indium Phosphide and Related Materials (IPRM) <23, 2011, Berlin>
Conference Paper
Fraunhofer HHI ()

Structural characteristics of uncapped InAs/InGaAsP dots were evaluated based on a simple approach using image processing of atomic-force micrographs. Height, mean area, ensemble density, and shape of the dots were determined. On this basis a systematic study of the effect of growth temperature and growth interruption as the main parameters that influence the formation of the dots was performed. With a PL analysis of buried QDs deposited in the same run with the same growth conditions a correlation between optical and structural characteristics was developed. On this basis comparison of modelled transition energies with experimental data was made possible.