Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Subcell I-V characteristic analysis of GaInP/GaInAs/Ge solar cells using electroluminescence measurements

: Rönsch, S.; Hoheisel, R.; Dimroth, F.; Bett, A.W.


Applied Physics Letters 98 (2011), No.25, Art. 251113, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; Alternative Photovoltaik-Technologien; III-V Epitaxie und Solarzellen; III – V: Epitaxie Solarzellen und Bauelemente

The I-V characteristics of the individual subcells of a monolithic Ga 0.50 In0.50 P/ Ga0.99 In0.01 As/Ge triple-junction solar cell have been extracted from measurements of the electroluminescence peak intensity as a function of the electroluminescence injection current. By using the spectral reciprocity relation between the electroluminescence and the quantum efficiency, the individual subcell I-V characteristics were derived. It is shown that the subcell dark I-V characteristics and the subcell illuminated I-V characteristics are accessible under variable spectral illumination conditions.