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Accuracy and performance of 3D mask models in optical projection lithography

: Agudelo, V.; Evanschitzky, P.; Erdmann, A.; Fühner, T.; Shao, F.; Limmer, S.; Fey, D.


Dusa, M.V. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Optical microlithography XXIV. Vol.1 : 1 - 3 March 2011, San Jose, California, United States; part of SPIE advanced lithography
Bellingham, WA: SPIE, 2011 (Proceedings of SPIE 7973)
ISBN: 978-0-8194-8532-8
Paper 79730O
Conference "Optical Microlithography" <24, 2011, San Jose/Calif.>
Conference Paper
Fraunhofer IISB ()

Different mask models have been compared: rigorous electromagnetic field (EMF) modeling, rigorous EMF modeling with decomposition techniques and the thin mask approach (Kirchhoff approach) to simulate optical diffraction from different mask patterns in projection systems for lithography. In addition, each rigorous model was tested for two different formulations for partially coherent imaging: The Hopkins assumption and rigorous simulation of mask diffraction orders for multiple illumination angles. The aim of this work is to closely approximate results of the rigorous EMF method by the thin mask model enhanced with pupil filtering techniques. The validity of this approach for different feature sizes, shapes and illumination conditions is investigated.