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Effect of incomplete ionization for the description of highly aluminum-doped silicon

: Rüdiger, M.; Rauer, M.; Schmiga, C.; Hermle, M.


Journal of applied physics 110 (2011), No.2, Art. 024508, 7 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Kontaktierung und Strukturierung; Herstellung und Analyse von hocheffizienten Solarzellen; Messtechnik und Produktionskontrolle; Charakterisierung; Zellen und Module

In this study we present an advanced method for precise modeling of highly aluminum-doped p+ silicon, leading to excellent agreement of numerical and experimental data within a broad range. We analyze the influence of different recombination mechanisms on the saturation current densities of Al-doped Si surfaces for different Al profiles. Lateral doping inhomogeneities and the effect of incomplete ionization have been examined in detail. We demonstrate that incomplete ionization affects the profile characteristics significantly and, therefore, has to be accounted for in accurate modeling of highly Al-doped silicon.