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Nanoporous gold bumps for low temperature bonding

: Oppermann, H.; Dietrich, L.


Microelectronics reliability 52 (2012), No.2, pp.356-360
ISSN: 0026-2714
Journal Article
Fraunhofer IZM ()

Nanoporous gold bumps have been deposited on silicon wafers by electroplating a silver-gold alloy followed by etching the silver. An open-porous cellular structure of gold at meso-scale is left on top of the bumps. For flip chip bonding we found low temperature and low force bonding conditions. The porous interconnects have very promising properties, like compressibility and reduced stiffness, which should result in higher bond yield and extended reliability.