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Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements
|Institute of Electrical and Electronics Engineers -IEEE-:|
IEEE 14th International Interconnect Technology Conference and Materials for Advanced Metallization, IITC/MAM 2011 : Dresden, Germany, 8 - 12 May 2011
New York, NY: IEEE, 2011
|International Interconnect Technology Conference (IITC) <14, 2011, Dresden>|
Materials for Advanced Metallization Conference (MAM) <20, 2011, Dresden>
| Conference Paper|
|Fraunhofer CNT ()|
A physical vapor deposition tool for 300 mm wafers was coupled with an angle resolved photoelectron spectroscopy tool (ARXPS) and used to study the growth of TaN single layer and TaN/Ta double layer diffusion barriers. The nitrogen content of TaN was adjusted by controlling the nitrogen flow and by varying the deposition power. We describe a process recipe that allows us to decrease the TaN thickness while still maintaining the Ta layer in the low resistivity -phase. The process recipe was developed on blanket wafers and evaluated in a test structure for high performance CMOS products.