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Surface modification of porous low-k material by plasma treatment and its application on reducing the damage from sputtering and CMP process
|Institute of Electrical and Electronics Engineers -IEEE-:|
IEEE 14th International Interconnect Technology Conference and Materials for Advanced Metallization, IITC/MAM 2011 : Dresden, Germany, 8 - 12 May 2011
New York, NY: IEEE, 2011
|International Interconnect Technology Conference (IITC) <14, 2011, Dresden>|
Materials for Advanced Metallization Conference (MAM) <20, 2011, Dresden>
| Conference Paper|
|Fraunhofer ENAS ()|
The influence of CH4, H2, NH3 and He plasma on the properties of porous low-k material is studied. It is found that the H2, He, NH3 plasma can cause huge carbon depletion in the porous low-k material, and change the low-k surface from hydrophobic to hydrophilic, which will induce moisture uptake into the low-k material during the CMP process, and results in the increase of the k value and leakage current. The CH4 plasma can make low-k material more resist against moisture uptake and keep the k value and leakage current of low-k films stable.