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Influence of slow surface states on effective lifetime measurements

: Seiffe, J.; Hofmann, M.; Rentsch, J.; Preu, R.


Glunz, S.; Aberle, A.; Brendel, R.; Cuevas, A.; Hahn, G.; Poortmans, J.; Sinton, R.; Weeber, A.:
SiliconPV 2011 Conference, 1st International Conference on Crystalline Silicon Photovoltaics. Proceedings : Freiburg, Germany, 17.-21.04.2011
Amsterdam: Elsevier, 2011 (Energy Procedia 8, 2011)
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <1, 2011, Freiburg>
Conference Paper, Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung; Zellen und Module

In a recent work, the effect of surface states following a change of the Fermi level with a characteristic relaxation time relax on transient effective charge carrier lifetime measurements has been described. The working condition for solar cells, however, is a steady-state low-injection at the passivated surface. In the work presented here, the effect of such surface states in steady-state low-injection conditions is discussed and the considerations are compared with quasi-steady-state lifetime measurements on a sample exhibiting such surface states. Careful comparison of transient and quasi-steady-state lifetime measurements leads to an evaluation of the characteristic relaxation time of the surface traps.