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Analysis of the diffused front surface field of n-type silicon solar cells with a-Si/c-Si heterojunction rear emitter

 
: Bivour, M.; Rüdiger, M.; Reichel, C.; Ritzau, K.-U.; Hermle, M.; Glunz, S.W.

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Glunz, S.; Aberle, A.; Brendel, R.; Cuevas, A.; Hahn, G.; Poortmans, J.; Sinton, R.; Weeber, A.:
SiliconPV 2011 Conference, 1st International Conference on Crystalline Silicon Photovoltaics. Proceedings : Freiburg, Germany, 17.-21.04.2011
Amsterdam: Elsevier, 2011 (Energy Procedia 8, 2011)
ISSN: 1876-6102
pp.185-192
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <1, 2011, Freiburg>
English
Conference Paper, Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Abstract
In this work, we focus on the optimization of small-area n +np+ n-type silicon solar cells featuring an amorphous/crystalline silicon heterojunction (a-Si:H/c-Si SHJ) rear emitter. For cells with a locally c-Si(n++) diffused high-low junction underneath the front side metallization and a full-area c-Si(n+) diffused front surface field (FSF) in between, efficiencies of up to 20.6 % have been reached. It is shown by experiment and two-dimensional device simulation that when omitting the full-area c-Si(n+) FSF a sufficient two-dimensional majority carrier transport via the base to the local c-Si(n++) FSF can be secured. For the front side passivation of the c-Si base a stack of thermal SiO2 / SiNx and Al2O3 / SiNx was applied.

: http://publica.fraunhofer.de/documents/N-189432.html