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Surface passivation of phosphorus-diffused emitters by inline thermal oxidation

: Mack, S.; Wufka, C.; Wolf, A.; Belledin, U.; Scheffler, D.; Biro, D.


Glunz, S.; Aberle, A.; Brendel, R.; Cuevas, A.; Hahn, G.; Poortmans, J.; Sinton, R.; Weeber, A.:
SiliconPV 2011 Conference, 1st International Conference on Crystalline Silicon Photovoltaics. Proceedings : Freiburg, Germany, 17.-21.04.2011
Amsterdam: Elsevier, 2011 (Energy Procedia 8, 2011)
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <1, 2011, Freiburg>
Conference Paper, Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Produktionsanlagen und Prozessentwicklung

We show that inline thermal oxidation is a very promising alternative to the use of conventional batch type quartz tube furnaces for the passivation of industrial phosphorus-diffused emitters. Our results reveal that both inline and batch oxidation allow similar results for oxide layer thickness, sheet resistance and, most important, emitter dark saturation current density J 0e even when compressed dry air is used as a cost effective oxygen source. Using a 10 nm thin thermal oxide layer and a SiNx antireflection coating of adapted thickness, we achieve J0e values as low as 100 fA/cm2 (68 /sq., textured surface). Using a simple inline oxidation process in air ambient, solar cells with a conventional Al-BSF rear side and a thermal SiO2/SiNx passivated front yield average efficiencies of 18.1%, demonstrating 0.3% absolute efficiency gain compared to solely SiNx passivated emitter references.