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Recombination at metal-emitter interfaces of front contact technologies for highly efficient silicon solar cells

 
: Fellmeth, T.; Born, A.; Kimmerle, A.; Clement, F.; Biro, D.; Preu, R.

:

Glunz, S.; Aberle, A.; Brendel, R.; Cuevas, A.; Hahn, G.; Poortmans, J.; Sinton, R.; Weeber, A.:
SiliconPV 2011 Conference, 1st International Conference on Crystalline Silicon Photovoltaics. Proceedings : Freiburg, Germany, 17.-21.04.2011
Amsterdam: Elsevier, 2011 (Energy Procedia 8, 2011)
ISSN: 1876-6102
pp.115-121
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <1, 2011, Freiburg>
English
Conference Paper, Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

Abstract
We present an experimental approach to extract the dark saturation current density j0e-met at the emitter-metal interface of the front contact. For this purpose, 2×2 cm2 sized silicon solar cells have been realized featuring different metallization fractions FM. By simply applying the one-diode-model, the dark current density j01 is determined from the open circuit voltage Voc. From the slope of the j01 over FM plot, j0e-met is extracted. However, this is only valid if the dominant recombination mechanism at V oc features a diode character that is close to unity. Hence, the local ideality factor m is determined from the suns-Voc-curve indicating the required value close to one. Three main effects are observed. First, the metallization methods which are compared show different influences on j0e-met on the same emitter configuration. Second, an emitter drive-in due to an additional short thermal oxidation lowers j0e-met. Also, the field-effect passivation of the highly n- doped selective emitter decreases j0e-met effectively. By combining the field effect passivation with a short drive-in step the very low value of j0e-met = 386 fA/cm2 is reported.

: http://publica.fraunhofer.de/documents/N-189423.html