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Intrinsic effects of double side collecting silicon solar cells

 
: Greulich, J.; Glatthaar, M.; Fertig, F.; Clement, F.; Thaidigsmann, B.; Fallisch, A.; Biro, D.; Rüdiger, M.; Hermle, M.; Rein, S.

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Glunz, S.; Aberle, A.; Brendel, R.; Cuevas, A.; Hahn, G.; Poortmans, J.; Sinton, R.; Weeber, A.:
SiliconPV 2011 Conference, 1st International Conference on Crystalline Silicon Photovoltaics. Proceedings : Freiburg, Germany, 17.-21.04.2011
Amsterdam: Elsevier, 2011 (Energy Procedia 8, 2011)
ISSN: 1876-6102
pp.160-166
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <1, 2011, Freiburg>
English
Conference Paper, Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen; Charakterisierung; Zellen und Module

Abstract
Double side collecting silicon solar cells such as the emitter wrap through and the both sides contacted and collecting concept are one possibility to maintain high efficiencies even on low lifetime material. To investigate the intrinsic advantages and limitations of this concept we use the solution of the continuity equation under low level injection conditions for a double side collecting (n+pn+) and a single side collecting (n +pp+) solar cell. In general, compared to the single side collecting structure, the double side collecting structure yields the highest advantages concerning the product of the short circuit current density and the open circuit voltage Jsc·Voc on highly doped material with diffusion lengths in the range of half the cell thickness. A realistic calculation of the fill factor of such devices is done using two dimensional numerical simulations. It is shown that a major reduction of the fill factor is caused by laterally varying voltage induced non- generation losses and ohmic losses, both caused by the majority carrier flow in the base. Electro- and photoluminescence images verify and illustrate the lateral voltage distribution under different illumination levels and terminal voltages.

: http://publica.fraunhofer.de/documents/N-189418.html