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Comprehensive microscopic analysis of laser-induced high doping regions in silicon

 
: Gundel, P.; Suwito, D.; Jäger, U.; Heinz, F.D.; Warta, W.; Schubert, M.C.

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Postprint urn:nbn:de:0011-n-1894003 (273 KByte PDF)
MD5 Fingerprint: bccc18616f1d9d9283e3eae492cdfdf4
© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 24.5.2013


IEEE transactions on electron devices 58 (2011), No.9, pp.2874-2877
ISSN: 0018-9383
English
Journal Article, Electronic Publication
Fraunhofer ISE ()
Siliciummaterialcharakterisierung; Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Herstellung und Analyse von hocheffizienten Solarzellen; Charakterisierung; Zellen und Module

Abstract
Microscopic laser-doped regions in advanced solar cell concepts are analyzed to determine the doping density and to identify the damage caused by the laser process. For these investigations, microphotoluminescence spectroscopy and micro-Raman spectroscopy are utilized to measure doping density, internal stress, and carrier lifetime with micrometer resolution. This analysis proves the high applicability of the microspectroscopic techniques for the characterization of laser-doped regions by analyzing the profile of the advanced local doping process and the laser-induced damage particularly at the edges of the highly doped regions.

: http://publica.fraunhofer.de/documents/N-189400.html