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Investigations of thermocompression bonding with thin metal layers
|Institute of Electrical and Electronics Engineers -IEEE-:|
16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2011 : 5-9 June 2011, Beijing
New York, NY: IEEE, 2011
|International Solid-State Sensors, Actuators and Microsystems Conference <16, 2011, Beijing>|
| Conference Paper|
|Fraunhofer ENAS ()|
In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results.