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2011
Conference Paper
Titel
Low-cost 25Gb/s 1300nm electroabsorption-modulated InGaAlAs RW-DFB-laser
Abstract
1300nm EMLs have been realized using an identical InGaAlAs MQW layer stack for the DFB and the EAM section and thus allowing for low fabrication costs. The devices show excellent 25Gb/s and 40Gb/s modulation performance at 50°C and are therefore well suited to be used in 4x25Gb/s systems.