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Low-cost 25Gb/s 1300nm electroabsorption-modulated InGaAlAs RW-DFB-laser

: Moehrle, M.; Przyrembel, G.; Bornholdt, C.; Sigmund, A.; Molzow, W.-D.; Klein, H.

Institute of Electrical and Electronics Engineers -IEEE-:
Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 : 22-26 May 2011, Berlin
New York, NY: IEEE, 2011
ISBN: 978-1-4577-1753-6
Art.42, 4 pp.
International Conference on Indium Phosphide and Related Materials (IPRM) <23, 2011, Berlin>
Compound Semiconductor Week (CSW) <2011, Berlin>
Conference Paper
Fraunhofer HHI ()

1300nm EMLs have been realized using an identical InGaAlAs MQW layer stack for the DFB and the EAM section and thus allowing for low fabrication costs. The devices show excellent 25Gb/s and 40Gb/s modulation performance at 50°C and are therefore well suited to be used in 4x25Gb/s systems.