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2011
Conference Paper
Titel
Field emission mechanism of n-type semiconducting diamond with negative electron affinity
Abstract
In order to utilize negative electron affinities (NEA) on diamond surfaces, field emission from n-type diamond with NEA was investigated. It was confirmed, by ultraviolet photoelectron spectroscopy (UPS), that hydrogen-plasma treated n-type diamond surface has NEA. Field electron emission properties as a function of anode-diamond distances were measured and a potential drop in vacuum was evaluated. It was found that electric fields of over few 10V/m were required to emit electrons from n-type diamond NEA surface. It was considered that such higher electric fields were necessary to reduce an internal barrier at NEA surface. From the field emission results, the internal barrier height was estimated to be about 3.3 eV.