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Conduction mechanisms and environmental sensitivity of solution-processed silicon nanoparticle layers for thin-film transistors

 
: Weis, S.; Körmer, R.; Jank, M.P.M.; Lemberger, M.; Otto, M.; Ryssel, H.; Peukert, W.; Frey, L.

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Small 7 (2011), No.20, pp.2853-2857
ISSN: 1613-6810
English
Journal Article
Fraunhofer IISB ()

Abstract
Room-temperature, solution-processed, silicon nanoparticle thin films show significant gating with distinct hysteresis in their current-voltage characteristics. Device performance strongly depends on measurement environment and charge transport is determined by particle surfaces. Particle encapsulation with polymethyl methacrylate or Al2O3 reduces hysteresis and device sensitivity against environmental influences. Both Al 2O3 coating and UV exposure during measurements alter current transport and enhance conductivity, providing evidence for surface-dominated transport.

: http://publica.fraunhofer.de/documents/N-189035.html