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  4. Development of orthogonal tight-binding models for Ti-C and Ti-N systems
 
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2011
Journal Article
Title

Development of orthogonal tight-binding models for Ti-C and Ti-N systems

Abstract
We develop p-d orthogonal tight-binding (OTB) models for the description of TiCx and TiNx compounds in the 1.0>x>0.5 composition range. For the parametrization of bond integrals we use a recently developed method allowing projection of the one-electron wave functions obtained within the density functional theory onto optimized atom-centered orbitals. The performance of the OTB models is investigated for a wide range of properties: binding energy of elements and compounds, density of states, formation energy of vacancy-ordered defects, elastic constants, and phonon dispersions. The models provide a good description of the ground state properties at 1:1 composition and show a fair transferability for various atomic environments in elemental and binary phases.
Author(s)
Margine, E.R.
Kolmogorov, A.N.
Reese, M.
Mrovec, M.
Elsässer, C.
Meyer, B.
Drautz, R.
Pettifor, D.G.
Journal
Physical Review. B  
DOI
10.1103/PhysRevB.84.155120
Language
English
Fraunhofer-Institut für Werkstoffmechanik IWM  
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