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Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding

: Harjanne, M.; Kapulainen, M.; Ylinen, S.; Aalto, T.; Ollila, J.; Mörl, L.; Passenberg, W.


Righini, G.C. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Silicon photonics and photonic integrated circuits II : 12 - 16 April 2010, Brussels, Belgium
Bellingham, WA: SPIE, 2010 (Proceedings of SPIE 7719)
ISBN: 978-0-8194-8192-4
Paper 77190S
Conference "Silicon Photonics and Photonic Integrated Circuits" <2, 2010, Brussels>
Conference Paper
Fraunhofer HHI ()

In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 m thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 m. Using thermocompression bonding between thin gold pads (500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.