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Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism

3D-Simulation der superkonformen Kupferabscheidung
: Bär, E.; Lorenz, J.; Ryssel, H.

Mathad, G.S. ; Electrochemical Society -ECS-:
Copper Interconnects. New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II
Pennington, NJ: ECS, 2003 (Electrochemical Society. Proceedings 2003,10)
ISBN: 1-56677-390-3
Electrochemical Society (Fall Meeting) <2003, Orlando/Fla.>
Conference Paper
Fraunhofer IISB ()
interconnect; process simulation; superconformal deposition; Verbindungsstruktur; Prozess-Simulation; superkonforme Abscheidung

For simulating superconformal copper deposition by chemical vapor deposition (C VD) or electroplating (EP), a model based on the curvature-enhanced accelerator coverage (CEAC) mechanism has been implemented. It allows to describe the phenomenon of enhanced growth rates at the bottom region of a feature, such as a vi a or a trench, by accumulation of an accelerating compound due to surface contraction resulting from layer growth. The mechanism can be used to model superconformal filling as experimentally observed for both CVD and EP of copper. Results for 3D simulations using this model are presented.