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  4. Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism
 
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2003
Conference Paper
Title

Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism

Other Title
3D-Simulation der superkonformen Kupferabscheidung
Abstract
For simulating superconformal copper deposition by chemical vapor deposition (C VD) or electroplating (EP), a model based on the curvature-enhanced accelerator coverage (CEAC) mechanism has been implemented. It allows to describe the phenomenon of enhanced growth rates at the bottom region of a feature, such as a vi a or a trench, by accumulation of an accelerating compound due to surface contraction resulting from layer growth. The mechanism can be used to model superconformal filling as experimentally observed for both CVD and EP of copper. Results for 3D simulations using this model are presented.
Author(s)
Bär, E.  orcid-logo
Lorenz, J.  
Ryssel, H.
Mainwork
Copper Interconnects. New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II  
Conference
Electrochemical Society (Fall Meeting) 2003  
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • interconnect

  • process simulation

  • superconformal deposition

  • Verbindungsstruktur

  • Prozess-Simulation

  • superkonforme Abscheidung

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