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EUV dark-field microscopy for defect inspection

 
: Juschkin, L.; Maryasov, A.; Herbert, S.; Aretz, A.; Bergmann, K.; Lebert, R.

:

McNulty, I. (Hrsg.):
10th International Conference on X-Ray Microscopy 2010 : Chicago, Illinois, (USA), 15 - 20 August 2010
Woodbury, N.Y.: AIP, 2011 (AIP Conference Proceedings 1365)
ISBN: 978-0-7354-0925-5
ISSN: 0094-243X
pp.265-268
International Conference on X-Ray Microscopy <10, 2010, Chicago/Ill.>
English
Conference Paper
Fraunhofer ILT ()

Abstract
An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a table-top discharge-produced plasma source has been developed. Several test structures (pits and bumps) on multilayer mirrors were investigated by our Schwarzschild objective-based EUV microscope at 13.5-nm wavelength and then characterized with an atomic force microscope. Possible defect-detection limits with large field of view and moderate magnification are discussed in terms of required irradiation dose and system performance.

: http://publica.fraunhofer.de/documents/N-188571.html