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Detailed physical simulation of program disturb mechanisms in sub-50 nm NAND flash memory strings

 
: Nguyen, C.D.; Kuligk, A.; Vexler, M.I.; Klawitter, M.; Beyer, V.; Melde, T.; Czernohorsky, M.; Meinerzhagen, B.

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Institute of Electrical and Electronics Engineers -IEEE-:
SISPAD 2010, International Conference on Simulation of Semiconductor Processes and Devices. Proceedings : Bologna, Italy, 6-8 September 2010
New York, NY: IEEE, 2010
ISBN: 978-1-4244-7699-2
ISBN: 978-1-4244-7701-2
ISBN: 1-4244-7701-8
ISBN: 978-1-4244-7700-5
pp.261-264
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <15, 2010, Bologna>
English
Conference Paper
Fraunhofer CNT ()

Abstract
The hot electron induced mechanism disturbing the stored information in inhibited bit lines during the programming of nonvolatile memories with NAND architecture is studied in detail using a new dedicated advanced physical simulation scheme for the first time.

: http://publica.fraunhofer.de/documents/N-188453.html