Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Detailed correlation of electrical and breakdown characteristics to the structural properties of ALD grown HfO2- and ZrO2-based capacitor dielectrics

: Schroeder, U.; Weinreich, W.; Erben, E.; Mueller, J.; Wilde, L.; Heitmann, J.; Agaiby, R.; Zhou, D.; Jegert, G.; Kersch, A.


Gendt, S. de (Hrsg.) ; Electrochemical Society -ECS-, Dielectric Science and Technology Division:
Atomic layer deposition applications 5 : Fifth Symposium on Atomic Layer Deposition was held on October 5 till 7, 2009 in Vienna, Austria as part of the 216th meeting of the Electrochemical Society
Pennington: Electrochemical Society, 2009 (ECS transactions 25,4)
ISBN: 978-1-566-77741-4
ISBN: 978-1-60768-091-8
ISSN: 1938-5862
Symposium on Atomic Layer Deposition <5, 2009, Wien>
Electrochemical Society (ECS Meeting) <216, 2009, Vienna>
Conference Paper
Fraunhofer CNT ()

Clear distinctions in the breakdown behavior of crystalline and amorphous dielectrics in MIM capacitors are correlated to different polarity asymmetries in the C-V and I-V characteristics of these symmetrical devices. Physical analysis of the complete capacitor stack reveals an oxidation of the TiN bottom electrode interface, leading to TiON formation and nitrogen diffusion into the dielectric. This can be traced back to the growth behavior of the dielectric on the TiN substrate. The atomic layer deposition caused interface formation is enhanced for crystalline films compared to amorphous, resulting in the asymmetry differences seen in electrical and breakdown characterization. In addition, asymmetrical charge trapping and a higher trap density are assumed for crystalline dielectric. These effects are detected both for doped HfO 2 and ZrO2 layers.