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Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write
: Platzgummer, E.; Klein, C.; Joechl, P.; Loeschner, H.; Witt, M.; Pilz, W.; Butschke, J.; Jurisch, M.; Letzkus, F.; Sailer, H.; Irmscher, M.
|Zurbrick, L.S. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:|
Photomask Technology 2009 : Monterey, CA, USA, 15 September 2009
Bellingham, WA: SPIE, 2009 (Proceedings of SPIE 7488)
|Conference "Photomask Technology" <2009, Monterey/Calif.>|
| Conference Paper|
|Fraunhofer ISIT ()|
A detailed evaluation study has been performed with respect to the suitability of projection electron and ion multi-beam lithography for the fabrication of leading-edge complex masks. The study includes recent results as obtained with electron and ion multi-beam proof-of-concept systems with 200× reduction projection optics where patterns are generated on substrates using a programmable aperture plate system (APS) with integrated CMOS electronics, generating several thousands of well defined beams in parallel. A comparison of electron and ion projection multi-beam writing is provided, in particular with respect to the suitability to expose non-chemically amplified resist (non-CAR) materials. The extendibility of projection multi-beam technologies for 16nm hp, 11nm hp and 8nm hp mask nodes is discussed as well as for wafer direct write for 22nm hp and below.