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An industry perspective on the optimization of InGaN lasers and LEDs via modeling

 
: Gomez-Iglesias, A.; Sabathil, M.; Lermer, T.; Müller, J.; Galler, B.; Eichler, C.; Avramescu, A.; Dini, D.; Pietzonka, I.; Tautz, S.; Breidenassel, A.; Bruederl, G.; Lell, A.; Meyer, T.; Peter, M.; Lutgen, S.; Strauss, U.; Pasenow, B.; Koch, S.W.; Scheibenzuber, W.; Schwarz, U.T.

Piprek, J. ; Institute of Electrical and Electronics Engineers -IEEE-:
NUSOD 2011, 11th International Conference on Numerical Simulation of Optoelectronic Devices : 5-8 September 2011, Rome, Italy
Piscataway/NJ: IEEE, 2011
ISBN: 978-1-61284-877-8
ISBN: 978-1-61284-876-1
pp.187-188
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) <11, 2011, Rome>
English
Conference Paper
Fraunhofer IAF ()

Abstract
In this paper, we illustrate the role of modeling in the development of commercial nitride-based lasers and LEDs. Aside from optimizing device performance, joint analysis of simulations and experimental results can shed light into the
intrinsic properties of the InGaN/GaN material system.

: http://publica.fraunhofer.de/documents/N-186339.html