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A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs

 
: Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brueckner, P.; Seelmann-Eggebert, M.; Mikulla, M.; Kallfass, I.; Quay, R.

41st European Microwave Conference, EuMC 2011. Proceedings : 10-13 October 2011, Manchester, UK, European Microwave Week
Manchester, 2011
ISBN: 978-2-87487-022-4
pp.656-659
European Microwave Conference (EuMC) <41, 2011, Manchester>
European Microwave Week <2011, Manchester>
English
Conference Paper
Fraunhofer IAF ()

Abstract
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line
technology using 100 nm AlGaN/GaN dual-gate HEMTs. For the fabricated dual-stage amplifier a continuous wave saturated output power of up to 24.8 dBm (0.84 W/mm) at 63 GHz for 20 V drain bias was measured. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

: http://publica.fraunhofer.de/documents/N-185821.html