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Analysis of GaN HEMTs for broadband high-power amplifier design

: Musser, M.; Quay, R.; Raay, F. van; Mikulla, M.; Ambacher, O.

6th European Microwave Integrated Circuits Conference, EuMIC 2011. Proceedings : European Microwave Week, 10-11 October 2011, Manchester, UK
Manchester, 2011
ISBN: 978-2-87487-023-1
European Microwave Integrated Circuits Conference (EuMIC) <6, 2011, Manchester>
European Microwave Week (EuMW) <14, 2011, Manchester>
Conference Paper
Fraunhofer IAF ()

In this paper we present the analysis of GaN HEMT power cells for broadband high-power amplifier design. We compare different power cell layouts, different Al contents in the barrier layer, and different fieldplate configurations. With the results of the analysis we can specifically optimize the epitaxial choice, fieldplate configuration, and the layout of the power cell for broadband high-power amplifiers. The main findings include the challenging interdependence of the parameters with the variation of the technology parameters.