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  4. CMOS photodiodes for narrow linewidth applications
 
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2011
Conference Paper
Title

CMOS photodiodes for narrow linewidth applications

Abstract
In recent years CMOS image sensors have gained a major market share for general imaging applications. However, when standard CMOS image sensors are employed in applications that require the detection of light with a very small spectral width, like 3D-time-of-flight imaging or other applications with laser light illumination, problems arise, that are negligible in standard imaging applications with broadband illumination. For a given wavelength a strong variation of the sensitivity upon small process related variations of the dielectric stack on top of the photodiodes leads to large die to die variations. In this paper a method is presented that decreases these sensitivity variations by introducing multiple optical path lengths of the dielectric stack within each photodiode. Using this method the maximum quantum efficiency variation for process induced thickness variations could be reduced significantly for a broad range of wavelengths without any additional processing steps.
Author(s)
Hochschulz, Frank  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Dreiner, Stefan  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Vogt, Holger
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Paschen, Uwe
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Mainwork
IEEE Sensors 2011. Proceedings. Vol.3  
Conference
Conference on Sensors 2011  
DOI
10.1109/ICSENS.2011.6126960
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • CMOS Bildsensor

  • Photodiode

  • schmalbandig

  • monochromatisch

  • CMOS image sensor

  • narrow linewidth

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