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2011
Conference Paper
Titel
Low-temperature grown high-quality piezoelectric AIN Film for sensor application
Abstract
Aluminum nitride thin films grown at low temperature (< 200°C) on Si(001) using radio frequency (RF) sputter deposition technique have been characterized by measuring infrared (IR) spectra, breakdown voltage, and crystallographic orientation. The fullwidth-at-half-maximum of the E1(TO) mode in the IR measurement has been found to decrease for higher RF power. The breakdown electric field strength under dc voltage is around 5 MV/cm. The Xray diffraction measurements indicated negligible change in the tilt of the film crystallites following annealing for 1 h in vacuum at 1000°C. Cantilevers that can be used both as pressure/force or inertial sensors and actuators have been fabricated from our lowtemperature grown, thermally stable films.
Author(s)