Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Properties and reliability of silicon nitride substrates with AMB copper conductor

 
: Böhm, G.; Brunner, D.; Sichert, I.; Pönicke, A.; Schilm, J.

:
Fulltext urn:nbn:de:0011-n-1836133 (4.9 MByte PDF)
MD5 Fingerprint: 0460175b5d8197f3dfcc602429cf2a67
Created on: 11.11.2011


International Microelectronics and Packaging Society -IMAPS-:
IMAPS 2011, 44th International Symposium on Microelectronics. Proceedings. Vol.2 : Long Beach, California, USA, 9 - 13 October 2011
Red Hook, NY: Curran, 2012
ISBN: 978-1-618-39850-5
pp.777-784
International Symposium on Microelectronics (IMAPS) <44, 2011, Long Beach/Calif.>
English
Conference Paper, Electronic Publication
Fraunhofer IKTS ()
AMB; active metal brazing; Si3N4; thermal conductivity; reliability; copper conductor lines

Abstract
This paper focuses on the properties of Si3N4 substrate material with AMB (active metal brazing) copper conductor. A recently developed type of tape casted, gas pressure sintered silicon nitride ceramic with a three times higher thermal conductivity than known from typical standard silicon nitride materials and with good flexural strength was applied. The increase of thermal conductivity is the result of using different species of sintering aids and the optimization of their ratio in the material. The high bending strength allows creating a thinner substrate compared to other standard ceramic materials for power electronics, e.g. aluminum nitride. This reduction in thickness leads to a decrease of the total thermal resistance of the substrate which improves heat dissipation. For the AMB process a silver based active brazing solder composition optimized for Silicon Nitride was used. This optimization could be obtained by an investigation of the physical and chemical interactions between the brazing and the base material. A void free joint without short circuits between adjacent structures could be formed. The copper surface can be coated on demand with Nickel or Nickel/Gold for improved solderability and wire bondability as well as for corrosion protection. The silicon nitride substrate with AMB copper conductor lines and fully covered back side ground shows a higher reliability than comparable substrates made out of common, well known ceramic materials. The heat dissipation is comparable with conventional AMB substrates made of high thermal conductive ceramic such as Aluminum Nitride, but thermal cycling behavior exceeds the limits well known from AlN-AMB or AlN-DCB.

: http://publica.fraunhofer.de/documents/N-183613.html