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W-band direct detection radiometers using metamorphic HEMT technology

: Kallfass, I.; Hülsmann, A.; Tessmann, A.; Leuther, A.; Weissbrodt, E.; Schlechtweg, M.; Ambacher, O.


Wikner, D.A.; Luukanen, A.R. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Passive Millimeter-Wave Imaging Technology XIV : 28 April 2011, Orlando, Florida, United States
Bellingham, Wash.: SPIE, 2011 (Proceedings of SPIE 8022)
ISBN: 978-0-8194-8596-0
Paper 8022 0O, 5 pp.
Conference "Passive Millimeter-Wave Imaging Technology" <14, 2011, Orlando/Fla.>
Conference Paper
Fraunhofer IAF ()
direct detection; MHEMT; Schottky-diode detector; Dicke switch; millimeter-wave switch

At this paper we report on a W-band direct detection radiometer cascading a single-pole four-throw switch with integrated 50 Ohm load as a reference noise source, a 3 x 20 dB low-noise amplifier chain, and a broadband Schottky-diode detector. All components are designed and fabricated in 100 nm metamorphic high electron mobility transistor
(mHEMT) technology and use waveguide packaging. By using 2 channels of the switch module the Dicke-principle is
implemented to drastically reduce the inherent amplifier noise. The multi-throw switch insertion loss is less than 3.5 dB
on the chip level and 4.4 dB on the module level. The entire W-band direct detection radiometer chain is also integrated
on a single chip and packaged into a waveguide module, which was successfully tested and is now ready for system