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Simulation of plasma immersion ion implantation

Simulation von Plasma-Immersions-Ionenimplantation
: Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.

Postprint urn:nbn:de:0011-n-1833606 (463 KByte PDF)
MD5 Fingerprint: bc53cab8f111e63edb1c0058ca8eb10d
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Created on: 27.10.2011

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 : 8-10 September 2011, Osaka, Japan
New York, NY: IEEE, 2011
ISBN: 978-1-61284-419-0
ISBN: 978-1-61284-416-9
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2011, Osaka>
Conference Paper, Electronic Publication
Fraunhofer IISB ()
plasma immersion; ion implantation; simulation

Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1E15 to 1E17 cm-2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision approach for ion implantation. A good reproduction of the measured boron profiles was obtained using a double-exponential energetic spectrum of the boron ions.