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On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells

Über den Einfluss von Spitzentemperaturvariationen während RTA und MSA auf die Schottky-Kontaktwiderstände von 6-T SRAM-Zellen
: Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.


Solid-State Electronics 65-66 (2011), pp.114-122
ISSN: 0038-1101
European Solid-State Device Research Conference (ESSDERC) <40, 2010, Seville>
European Solid-State Circuits Conference (ESSCIRC) <36, 2010, Seville>
Journal Article, Conference Paper
Fraunhofer IISB ()
process variation; rapid thermal annealing; millisecond annealing; contact resistance; SRAM; TCAD

The influence of rapid thermal annealing (RTA) and millisecond annealing (MSA) peak temperature fluctuations, due to pattern effects, on Schottky contact resistances and the electrical properties of 6-T SRAM cells is studied in this work. TCAD simulations of 32 nm gate length single gate fully depleted silicon on insulator MOSFETs were carried out. The contact regions of the n+/p+ layers of a 6-T SRAM cell layout were separately handled in 3D TCAD simulations to calculate the dependence of contact resistances on RTA and MSA peak temperatures. Compact models of the 32 nm gate length transistors were extracted and used in circuit simulations. Finally, the impact of RTA and MSA peak temperature fluctuations on the electrical performance of single devices and 6-T SRAM cells were studied by ext ended SPICE simulations.