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Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors

Die Haftzentren und Minoritätsträgerlebensdauer in InAs/(GaIn)Sb Übergitter langwellenlänge Photodetekoren
: Yang, Q.K.; Pfahler, C.; Schmitz, J.; Pletschen, W.; Fuchs, F.


Razeghi, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Quantum sensing: Evolution and revolution from past to future : 27 - 30 January 2003, San Jose, California, USA
Bellingham/Wash.: SPIE, 2003 (SPIE Proceedings Series 4999)
ISBN: 0-8194-4799-4
Conference "Quantum Sensing: Evolution and Revolution from Past to Future" <2003, San Jose/Calif.>
Conference Paper
Fraunhofer IAF ()
trap center; Haftzentrum; minority carrier lifetime; Minoritätsträger-Lebensdauer; InAs/(GaIn)Sb superlattice; InAs/(GaIn)Sb Übergitter; photodetector; Photodetektor

Trap centers and minority carrier lifetimes are investigated in InAs/(GaIn)Sb superlattices used for photodetectors in the far-infrared wavelength range. In our InAs/(GaIn)Sb superlattice photodiodes, trap centers located at an energy level of about 1/3 band gap below the effective conduction band edge could be identified by simulating the current-voltage characteristics of the diodes. The simulation includes diffusion currents, generation-recombination contributions, band-to-band coherent tunneling, and trap assisted tunneling. By including the contributions due to trap-assisted tunneling, excellent reproduction of the current voltage curves is possible for diodes with cut-off wavelength in the whole 8-32 µm spectral range at temperatures between 140 K and 25 K. The model is supported by the observation of defect-related optical transitions at about 2/3 of the band-to-band energy in the spectra of the low temperature electroluminescence of the devices. With the combination of Hall- and photoconductivity measurements, minority carrier lifetimes are extracted as a dependence of temperature and carrier density.