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Technology and performance of AlGaN/GaN HEMTs fabricated on 2-inch epitaxy for microwave power applications

Technologie und Leistung von AlGaN/GaN HEMTs prozesiert auf zwei Zoll Epitaxie-Substraten für Mikrowellen Leistungsanwendungen
: Lossy, R.; Hilsenbeck, J.; Würfl, J.; Köhler, K.; Obloh, H.

Japan Society of Applied Physics -JSAP-:
International Workshop on Nitride Semiconductors 2000. Proceedings : Nagoya, September 24-27, 2000
Tokyo: The Institute of Pure and Applied Physics (IPAP), 2000 (IPAP Conference Series 1)
ISBN: 4-900526-13-4
International Workshop on Nitride Semiconductors (IWN) <2000, Nagoya>
Conference Paper
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; electrical; elektrisch; devices; Bauelement; heterostructure; Heterostruktur

Processing technology for AlGaN/GaN HEMTs fabricated by 2-inch stepper lithography was developed. The performance of HEMTs is evaluated, showing a very good uniformity of electrical properties over the wafer, which is superior to devices from contact lithography. For rf-power applications, scaling rules cannot be deduced by simple geometric considerations. Reductions due to limited heat dissipation need to be taken into account.