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Thick GaN layers grown by hydride vapor-phase epitaxy: Hetero- versus homo-epitaxy

Vergleich zwischen Hetero- und Homo-Epitaxie von dicken HVPE GaN Schichten
: Hageman, P.R.; Kirilyuk, V.; Corbeek, W.H.M.; Weyher, J.L.; Lucznik, B.; Bockowski, M.; Porowski, S.; Müller, S.


Journal of Crystal Growth 255 (2003), No.3-4, pp.241-249
ISSN: 0022-0248
Journal Article
Fraunhofer IAF ()
Substrat; substrate; epitaxy; Epitaxie; nitride; GaN; hydride; vapor phase epitaxy; Gasphasenepitaxie

In this paper, an overview will be given of the growth of thick GaN layers by hydride vapor-phase epitaxy. Two different kinds of substrates were used, that is MOCVD-grown GaN templates on sapphire and GaN single crystals. The layers grown on sapphire-based substrates suffer from the problem of cracking and pit formation. Although the morphology is not mirror-like, the optical and electrical quality of the material is excellent as demonstrated by photoluminescence and Hall-Van der Pauw measurements. The layers grown an Ga-polar GaN single crystals have almost perfect morphologies with only a very low density of pits. For the N-polar substrates the morphology is very rough, exhibiting the same features as are observed for the N-face MOCVD-grown GaN layers, both an sapphire and an N-face GaN single crystals.