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Terahertz optical properties of thin doped contact layers in GaAs device structures

Optische Eigenschaften im Terahertzbereich dünner dotierter Kontaktschichten in GaAs Bauelementstrukturen
 
: Bauer, T.; Kolb, J.S.; Mohler, E.; Roskos, H.G.; Köhler, K.

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Semiconductor Science and Technology 18 (2003), No.1, pp.28-32
ISSN: 0268-1242
ISSN: 1361-6641
English
Journal Article
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; terahertz; Terahertzbereich; transmission

Abstract
We investigate the transmittance of thin doped GaAs layers in the terahertz (THz) frequency range taking into account multiple reflections. Our experimental and theoretical study aims at providing a guideline for designing the top-side contact layers for THz emitters and receivers with direct, antenna-free coupling of he radiation. It is shown that the surface conductivity of the contact layer is the determining factor for the THz transmittance.

: http://publica.fraunhofer.de/documents/N-18219.html