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Fano resonances in semiconductor superlattices

Fanoresonanz in Halbleiterübergittern
: Canzler, T.W.; Holfeld, C.P.; Löser, F.; Lyssenko, V.G.; Leo, K.; Whittaker, D.M.; Köhler, K.


Physica. E 10 (2001), No.4, pp.593-596
ISSN: 1386-9477
Journal Article
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; superlattice; Übergitter; optical property; optische Eigenschaften; Fano resonance

We use semiconductor superlattices as a model system for the investigation of Fano resonances. In absorption the excitonic transitions of the Wannier-Stark ladder show the typical asymmetric line shape due to coupling to the continuum of lower-lying transitions. The unique feature of these Fano resonances is that they allow to continuously tune the key parameter - the coupling strength Gamma between the discrete state and the degenerate continuum - by varying the bias voltage. Using this feature, we directly show that the Fano coupling leads to a fast polarization decay. We also investigate the dependence of the Fano parameters on the structure of the superlattice and compare with an extensive theoretical model of the resonances.