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Dilute group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and realization of long wavelength (2.3 µm) GaInAsN QWs on InP

Verdünnte Gruppe II-AsN: Bindungsverhalten von Stickstoff in GaInAsN und AlGaAsN aud GaAs sowie lenhwellig emittierender (2,3µm) GaInAsN Quantenfilme auf InP
 
: Serries, D.; Geppert, T.; Köhler, K.; Ganser, P.; Wagner, J.

Weaver, B.D.:
Progress in semiconductors II - electronic and optoelectronic applications : Symposium held December 2 - 5, 2002, Boston, Massachusetts, U.S.A., Symposium M: "Progress in Semiconductor Materials II: Electronic and Optoelectronic Applications", held at the 2002 MRS fall meeting
Warrendale, Pa.: Materials Research Society, 2003 (Materials Research Society Symposium Proceedings 744)
ISBN: 1-558-99681-8
pp.627-636
Materials Research Society (Fall Meeting) <2002, Boston/Mass.>
Symposium M: Progress in Semiconductor Materials II: Electronic and Optoelectronic Applications <2002, Boston, Mass.>
English
Conference Paper
Fraunhofer IAF ()
III-V compound semiconductors; III-V Verbindungshalbleiter; dilute Arsenide-Nitride; verdünnte arsenid/nitride; quantum well; Quantenfilme; raman spectroscopy; Ramanspektroskopie

Abstract
Recent results on the local bonding of nitrogen in dilute GaInAsN and AlGaAsN on GaAs are reviewed, revealing that bonding of nitrogen in GaInAsN is controlled by an interplay between bond cohesive energy and reduction of local strain. Thus, III-N bonding in GaInAsN can be changed from Ga-N to In-N by post-growth thermal annealing. In AlGaAsN, in contrast, nitrogen bonds preferentially to Al, i.e. Al-N bonds are formed, due to the much larger cohesive energy of the Al-N bond. Further, results on indium-rich highly strained GaInAsN quantum wells on InP substrate are reported, showing room-temperature photoluminescence at wavelength up to 2.3 µm. This results demonstrates the potential of high indium content dilute GaInAsN for InP-based long wavelength diode lasers.

: http://publica.fraunhofer.de/documents/N-18212.html