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Measurement of the tuneable absorption in GaN-based multi-section laser diodes

 
: Scheibenzuber, W.; Schwarz, U.T.; Sulmoni, L.; Carlin, J.F.; Castiglia, A.; Grandjean, N.

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Physica status solidi. C 8 (2011), No.7-8, pp.2345-2347
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Workshop on Nitride Semiconductors (IWN) <2010, Tampa/Fla.>
English
Journal Article, Conference Paper
Fraunhofer IAF ()
laser diode; group III-nitrides; absorption

Abstract
We present an experimental technique to measure the absorption spectra of the absorber section of GaN-based multi-section laser diodes using optical gain spectroscopy. We find that the absorption of the examined laser diodes decreases with increasing negative bias, which results from a reduction of the internal field in the quantum wells by the external voltage. A maximum modal absorption as high as 250 cm(-1) at the laser wavelength of 413nm is measured at 1V absorber voltage.

: http://publica.fraunhofer.de/documents/N-180643.html