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2011
Conference Paper
Titel
CMOS 3D image sensor based on pulse modulated Time-of-Flight principle and intrinsic lateral drift-field photodiode pixels
Abstract
Design and measurement results of a CMOS 128 x 96 pixel sensor are presented, which can be used for three-dimensional (3D) scene reconstruction applications based on indirect time-of-flight (ToF) principle enabled by pulse modulated active laser illumination. The 40µm pitch pixels are based on the novel intrinsic lateral drift-field photodiode (LDPD) that allows for a 30ns complete charge transfer from the photoactive area into the readout node, and accumulation of signal charge over several readout cycles for extended signal-to-noise ratio (SNR). Distance measurements have been performed using a specially developed camera system.
Author(s)