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Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications

 
: Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Hurm, V.; Massler, H.; Riessle, M.; Lösch, R.; Ambacher, O.

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 9th International New Circuits and Systems Conference, NEWCAS 2011 : Held in Bordeaux, France, on June 26 - 29, 2011
Piscataway/NJ: IEEE, 2011
ISBN: 978-1-61284-136-6
ISBN: 1-61284-135-X
ISBN: 978-1-61284-135-9
pp.269-272
International New Circuits and Systems Conference (NEWCAS) <9, 2011, Bordeaux>
English
Conference Paper
Fraunhofer IAF ()

Abstract
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate lengths have been developed at Fraunhofer IAF for operation in the millimeter-wave frequency range up to 500 GHz. Based on these technologies, a variety of millimeter-wave monolithic integrated circuits (MMICs) has been realized employing grounded coplanar waveguides (GCPWs). To demonstrate the potential of these technologies, this paper presents some examples of MMICs and modules developed for use in next generation remote sensing and communication systems. Two four-stage cascode amplifier circuits for operation in the frequency ranges 220 - 325 GHz (H-band) and 325 - 500 GHz (WR-2.2 waveguide band) were realized using the 50 and 35 nm mHEMT technology, respectively. Furthermore, a 200 GHz active subharmonically-pumped heterodyne receiver MMIC based on the 100 nm mHEMT technology was realized.

: http://publica.fraunhofer.de/documents/N-175865.html