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Metamorphic HEMT technologies for millimeter-wave low-noise applications

Metamorphe HEMT Technologien für rauscharme Millimeterwellen Applikationen
 
: Tessmann, A.; Leuther, A.; Massler, H.; Reinert, W.; Schwörer, C.; Dammann, M.; Walther, M.; Schlechtweg, M.; Weimann, G.

Mallat, J. ; European Space Agency -ESA-, Paris:
3rd ESA Workshop on Millimetre Wave Technology and Applications 2003. Circuits, Systems, and measurement techniques
Noordwijk: ESA Publications Division, 2003
pp.317-322
Workshop on Millimetre Wave Technology and Applications <3, 2003, Espoo, Finnland>
English
Conference Paper
Fraunhofer IAF ()
metamorphic; HEMT; metamorph; MHEMT; composite-channel; zweigeteilter Kanal; reliability; Zuverlässigkeit; LNA; low noise; amplifier; rauscharm; Verstärker; MMIC; cascode; Kaskode; CPW; coplanar waveguide; koplanare Wellenleiter

Abstract
Two metamorphic composite-channel InAlAs/InGaAs based high electron mobility transistor (MHEMT) technologies have been developed for active and passive imaging applications at millimeter-wave frequencies. The first technology features a 0.07 µm gate-length in combination with an In content of 80 % in the channel. An extrinsic transit frequency (ft) of 290 GHz, an extrinsic transconductance (gm) of 1500 mS/mm and a gate-drain breakdown voltage of 2.8 V were measured. For the second MHEMT technology the In content of the channel was reduced to 65 % and the gate length was increased to 0.1 µm, resulting in an off-state breakdown voltage of 4.3 V, an extrinsic ft of 200 GHz and an extrinsic gm of 1200 mS/mm. Using these advanced MHEMT technologies, two coplanar W-band low-noise amplifier (LNA) MMICs were realized. A small-signal gain of 13 dB with an average noise figure of 2.3 dB between 80 and 100 GHz was achieved with the 70 nm gate-length process, and a linear gain of 10 dB with approximately 3 dB associated noise figure was measured within the same frequency range by applying the 100 nm technology.

: http://publica.fraunhofer.de/documents/N-17415.html